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BLM04N08 PDF预览

BLM04N08

更新时间: 2023-12-06 20:10:10
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
8页 829K
描述
The BLM04N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

BLM04N08 数据手册

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Green Product  
BLM04N08  
80V N-Channel Power MOSFET  
DESCRIPTION  
KEY CHARACTERISTICS  
VDS = 80V,ID = 200A  
The BLM04N08 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge. It can be used in a wide  
variety of applications.  
RDS(ON) < 4mΩ @ VGS=10V  
High density cell design for lower Rdson  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Excellent package for good heat dissipation  
100% UIS TESTED  
Application  
Power switching application  
Hard switched and High frequency circuits  
Uninterruptible power supply  
100% DVDS TESTED!  
TO-220 Top View  
TO-263 Top View  
Schematic diagram  
Package Marking And Ordering Information  
Device Marking  
Ordering Codes  
BLM04N08-P  
BLM04N08-B  
Package  
TO-220  
TO-263  
Product Code  
Packing  
Tube  
M04N08  
BLM04N08  
BLM04N08  
M04N08  
Reel  
Absolute Maximum Ratings (TA=25  
unless otherwise noted)  
Symbol  
Parameter  
Limit  
80  
Unit  
Drain-Source Voltage  
V
V
VDS  
VGS  
ID  
Gate-Source Voltage  
±20  
Drain Current-Continuous  
200  
A
Drain Current-Pulsed (Note 1)  
800  
A
IDM  
270  
W
mJ  
Maximum Power Dissipation(Tc=25)  
Single pulse avalanche energy(Note 2)  
Operating Junction and Storage Temperature Range  
PD  
1600  
-55 To 175  
EAS  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case  
RθJC  
0.41  
/W  
Page1  
www.belling.com.cn  
V 1.1  

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