Datasheet > BLM03N03

BLM03N03

更新时间： 2023-12-06 20:09:34

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
7页	562K
描述
The BLM03N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.

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BLM03N03 数据手册

BLM03N03

Power MOSFET

1．Description

The BLM03N03 uses advanced trench

technology to provide excellent RDS(ON), low

gate charge. It can be used in a wide variety of

applications.

KEY CHARACTERISTICS

Parameter

V_DS

Value

Unit

I_D

150

2.3

3.8

mΩ

R_DS(ON)@10V_.Typ

R_DS(ON)@4.5V_.Typ

FEATURES

⚫

Advanced Trench Technology

Excellent RDS(ON) and Low Gate Charge

LeadFree

APPLICATIONS

⚫

LoadSwitch

PWMApplication

PowerManagement

TO-252

100% UIS TESTED!

100% ΔVds TESTED!

ORDERING INFORMATION

Device Marking Ordering Codes

Package Product Code

TO-252 BLM03N03

Packing

Reel

M03N03

BLM03N03-D

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BLM03N03:30V 3mΩ

www.belling.com.cn

V1.0

4/2023

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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