Datasheet > BLF6G38-50,112

BLF6G38-50,112

更新时间： 2024-11-19 22:07:43

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RF FET LDMOS 65V 14DB SOT502A

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BLF6G38-50,112 数据手册

BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

50 W LDMOS power transistor for base station applications at frequencies from

3400 MHz to 3800 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C in a class-AB production test circuit.

Mode of operation f (MHz)

V_DS(V) P_L(AV)(W) P_L(M)^[1](W) G_p(dB) _D(%) ACPR_885k(dBc) ACPR_1980k(dBc)

1-carrier N-CDMA^[2]3400 to 3600 28

49^[3]

64^[3]

[1] P_L(M)stands for peak output power.

[2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the

CCDF. Channel bandwidth is 1.23 MHz.

[3] Measured within 30 kHz bandwidth.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 %

probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of

3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an I_Dqof 450 mA, a

power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W:

 Qualified up to a maximum V_DSoperation of 32 V

 Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation

 Internally matched for ease of use

 Low gold plating thickness on leads

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

12 3 4 5 6 7...13

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