Datasheet > BL990P10-3DL8

BL990P10-3DL8

更新时间： 2024-09-25 17:01:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	710K
描述
-100V, P Channel MOSFETs

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中文翻译

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数据手册

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BL990P10-3DL8 数据手册

P-Channel Enhancement Mode MOSFET

BL990P10-3DL8

Features



Reliable and Rugged

Green device available

HBM: JESD22-A114-B: 1C

Applications



Synchronous Rectification

Motor Control

Portable equipment application

Mechanical Data



Case: PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL990P10-3DL8

PDFN3×3-8L

5000 pcs / Tape & Reel

990P10

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Unit

Value

V_DSS

V_GSS

-100

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

-13

-8

I_D

-3

-1.8

I_DM

E_AS

P_D

-52

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

MTM1376A: September 2023 [2.1]

www.gmesemi.com

12 3 4 5 6

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