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BL80N20L PDF预览

BL80N20L

更新时间: 2024-11-28 14:55:31
品牌 Logo 应用领域
上海贝岭 - BELLING /
页数 文件大小 规格书
12页 738K
描述
BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications

BL80N20L 数据手册

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BL80N20L  
Power MOSFET  
1Description  
BL80N20L, the silicon N-channel  
Enhanced MOSFETs, is obtained by advanced  
MOSFET technology which reduce the  
conduction loss, improve switching  
performance and enhance the avalanche  
energy. The transistor is suitable device for  
SMPS, high speed switching and general  
purpose applications.  
KEY CHARACTERISTICS  
Parameter  
VDS@Tj.max  
ID  
Value  
200  
80  
Unit  
V
A
RDS(ON).Typ  
Qg.Typ  
23  
155  
mΩ  
nC  
FEATURES  
Fast Switching  
Low Crss  
100% avalanche tested  
Improved dv/dt capability  
RoHS product  
APPLICATIONS  
High frequency switching mode power supply  
ORDERING INFORMATION  
Ordering Codes  
BL80N20L-W  
BL80N20L-F  
Package  
TO-3PN  
TO-247  
Product Code  
80N20L  
Packing  
Tube  
Tube  
BL80N20L-A  
XXXXProduct Code  
(2) Package type  
(1) Chip name  
XXXX  
YYWW ZZ  
SSSSS  
YYWWYear&Week  
ZZAssembly Code  
SSSSSLot Code  
(1)BL80N20L:200V 80A  
(2) W:TO-3PN F:TO-247  
BL80N20L  
Rev 1.0  
4/2019  
www.belling.com.cn  
Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2011 Belling All Rights Reserved  
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