Datasheet > BL80N20L

BL80N20L

更新时间： 2024-11-06 14:55:31

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
12页	738K
描述
BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications

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BL80N20L 数据手册

BL80N20L

Power MOSFET

1．Description

BL80N20L, the silicon N-channel

Enhanced MOSFETs, is obtained by advanced

MOSFET technology which reduce the

conduction loss, improve switching

performance and enhance the avalanche

energy. The transistor is suitable device for

SMPS, high speed switching and general

purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS@Tj.max

I_D

Value

200

Unit

R_DS(ON).Typ

Qg._Typ

155

mΩ

FEATURES



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL80N20L-W

BL80N20L-F

Package

TO-3PN

TO-247

Product Code

80N20L

Packing

Tube

BL80N20L-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1)BL80N20L:200V 80A

(2) W:TO-3PN F:TO-247

BL80N20L

Rev 1.0

4/2019

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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