Datasheet > BL80N08D

BL80N08D

更新时间： 2024-11-06 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	369K
描述
80A, 80V, 192.3W, N Channel, Power MOSFETs

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数据手册

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BL80N08D 数据手册

N-Channel Enhancement Mode MOSFET

BL80N08I BL80N08D

Features

Lead-free



R_DS(ON)= 8.5mΩ(typ.) @ V_GS= 10V

Avalanche rated

Reliable and rugged

Lead free and green devices available

Mechanical Data



Case: TO-251, TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

TO-251

TO-252

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

BL80N08I□

Package

Shipping Quantity

80pcs / Tube

Marking Code

TO-251

TO-252

80N08I

BL80N08D□

80pcs / Tube or 2500pcs / Tape & Reel

80N08D

Note for □: none is for Lead-free package

“G” is for Halogen Free package

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current

I_D

I_DM

E_AS

300

320

Single Pulse Avalanche Energy(L = 0.5mH, V_D= 64V)

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

T_J

192.3

0.65

°C/W

°C

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0087A: April 2020

www.gmesemi.com

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