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BL80N08B PDF预览

BL80N08B

更新时间: 2024-04-09 18:58:47
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 626K
描述
80A, 80V, 90W, N Channel, Power MOSFETs

BL80N08B 数据手册

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N-Channel Enhancement Mode MOSFET  
BL80N08 BL80N08B  
Features  
RDS(ON)=8.5mΩ(typ.)@VGS=10V.  
Avalanche Rated.  
Reliable and Rugged.  
Lead Free and Green DevicesAvailable.  
Typical Applications  
Power Management for Inverter Systems.  
Mechanical Data  
Case: TO-220AB, TO-263.  
Molding compound, UL flammability classification rating  
94V-0.  
BL80N08  
BL80N08B  
TO-263  
Terminals: Matte tin plated leads, solderable per MIL-  
STD-202, Method 208.  
TO-220AB  
Ordering Information  
Part Number  
Package  
Shipping  
Marking Code  
BL80N08  
TO-220AB  
50 pcs / Tube  
80N08  
BL80N08B  
TO-263  
50 pcs / Tube & 800 pcs / Tape & Reel  
80N08B  
Maximum Ratings (@TA=25°C unless otherwise specified)  
Symbol  
Parameter  
Value  
80  
Units  
VDSS  
Drain-Source voltage  
Gate -Source voltage  
Continuous Drain current  
V
V
VGSS  
±2 0  
80  
TC = 25°C  
ID  
A
TC = 100°C  
52  
IDM  
Pulsed Drain Current  
300  
109  
A
EAS  
Single Pulse Avalanche Energy (L = 0.5mH, VDD = 50V, VGS = 10V)  
mJ  
Thermal Characteristics  
Parameter  
BL80N08B  
Symbol  
BL80N08  
Unit  
125  
90  
45  
Power Dissipation *  
TC=25  
PD  
W
62.5  
TC=100℃  
Thermal resistance junction to ambient air  
Thermal resistance junction to case  
Junction temperature  
RθJA  
RθJc  
Tj  
62.5  
1.2  
40  
3
°C /W  
°C /W  
°C  
-55 to +150  
-55 to +150  
Storage temperature range  
TSTG  
°C  
MTM0057A: October 2022 [1.1]  
www.gmesemi.com  
1

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