Datasheet > BL4435A-S8

BL4435A-S8

更新时间： 2024-11-28 17:01:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	686K
描述
8.2A, 30V, 3.1W, P Channel, Power MOSFETs

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BL4435A-S8 数据手册

P-Channel Enhancement Mode MOSFET

BL4435A-S8

Features



High density cell design for ultralow R_DS(ON)

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

JESD22-A114-B ESD rating of class 1A per human body model

Mechanical Data



Case: SOP-8

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOP-8

Ordering Information

Part Number

Package

SOP-8

Shipping Quantity

Marking Code

BL4435A-S8

4000 pcs / Tape & Reel

4435-8

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-30

±20

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 70°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_A= 25°C) ^*1

Single Pulse Avalanche Energy ^*3

-8.2

I_D

-6.3

I_DM

E_AS

P_D

-50

°C

Power Dissipation(T_A= 25°C, R_θJA= 40°C/W) ^*1

Operating Junction Temperature Range

Storage Temperature Range

3.1

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Air ^*1

R_θJA

°C /W

MTM1132A: April 2023 [2.0]

www.gmesemi.com

12 3 4 5

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