Datasheet > BL4435A-3DL8

BL4435A-3DL8

更新时间： 2024-04-09 19:01:49

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	433K
描述
-30V, P Channel MOSFETs

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中文翻译

获取价格

数据手册

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BL4435A-3DL8 数据手册

P-Channel Enhancement Mode MOSFET

BL4435A-3DL8

Features



Advanced trench technology for ultralow R_DS(ON)

Fast switching speed

Excellent package for good heat dissipation

HBM: JESD22-A114-B: 1A

Mechanical Data



Case: PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

PDFN3×3-8L

Shipping Quantity

Marking Code

4435A

BL4435A-3DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-30

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

-24

-15

I_D

-8

-5

-96

I_DM

E_AS

°C

P_D

Power Dissipation (T_A= 25°C) ^*1

3.1

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

4.8

°C /W

MTM1494A: December 2023 [2.0]

www.gmesemi.com

12 3 4 5

中文翻译

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