Datasheet > BL3N100

BL3N100

更新时间： 2024-09-24 14:53:55

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
16页	660K
描述
"BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications."

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BL3N100 数据手册

BL3N100

Power MOSFET

1．Description

BL3N100, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable

device for SMPS, high speed switching and

general purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS@Tj.max

I_D

Value

1000

3.3

Unit

R_DS(ON).Typ

FEATURES

3.5

Ω



Fast Switching

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL3N100-P

BL3N100-A

BL3N100-U

BL3N100-D

Package

Product Code

BL3N100

Packing

Tube

Tape Reel

TO-220

TO-220F

TO-251

TO-252

BL3N100-A

XXXX Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW Year&Week

ZZ Assembly Code

SSSSS Lot Code

(1) BL3N100:1000V 3.3A

(2) A:TO-220F P:TO-220

U:TO-251 D：TO-252

BL3N100

V1.1

4/2019

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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