Datasheet > BL3205PBF

BL3205PBF

更新时间： 2024-11-25 17:01:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	690K
描述
100A, 55V, 200W, N Channel, Power MOSFETs

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BL3205PBF 数据手册

N-Channel Enhancement Mode MOSFET

BL3205PBF

Features



Advanced New Planar Technology

Ultra Low On-Resistance

Very Low Thermal Resistance

Fast Recovery Body Diode

HBM: JESD22-A114-B: 1C

Mechanical Data



Case: TO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matted-Tin plated; Solderable Per MIL-STD-202, Method 208

TO-220AB

Ordering Information

Part Number

Package

TO-220AB

Shipping Quantity

Marking Code

3205PBF

BL3205PBF

50 pcs / Tube

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

±20

100

Gate-to-Source Voltage

V_GSS

Continuous Drain Current (T_C= 25°C ) Silicon limited

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

I_D

I_DM

450

264

E_AS

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C)

Symbol

P_D

Value

200

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

°C

0.8

-55 ~ +175

T_STG

°C

MTM1045A: October 2023 [2.1]

www.gmesemi.com

12 3 4 5

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