Datasheet > BL2N20D

BL2N20D

更新时间： 2024-09-25 17:01:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	436K
描述
2.3A, 200V, 10.2W, N Channel, Power MOSFETs

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数据手册

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BL2N20D 数据手册

N-Channel Enhancement Mode MOSFET

BL2N20D

Features



High avalanche energy pulse withstand capability

Low gate drive voltage (Logic level capable)

Low input capacitance

Low on-resistance

Fast switching speed

Mechanical Data



Case: TO-252

Molding Compound, UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

Shipping

Marking Code

BL2N20D

TO-252

80 pcs / Tube or 2500 pcs / Tape & Reel

2N20D

Maximum Ratings (@T_A=25℃ unless otherwise specified)

Symbol

Parameter

Value

200

±20

2.3

Units

V_DSS

Drain-Source Voltage

V_GSS

Gate -Source Voltage

Continuous Drain Current, V_GS=10V

(Note 2)

I_D

1.8

Continuous Drain Current, V_GS=10V T_A=70℃(Note 2)

Continuous Drain Current, V_GS=10V

Pulsed Drain Current, V_GS=10V

Single Pulse Avalanche Energy

Single Pulsed Avalanche Current

Repetitive Avalanche Energy

(Note 1)

1.5

(Note 3)

I_DM

17.3

(Note 6)

E_AS

(Note 6)

I_AS

5.5

(Note 3)

E_AR

4.5

(Note 3)

I_AR

Repetitive Avalanche Current

5.5

(Note 1)

I_S

Continuous Source current (Body diode)

Pulsed Source current (Body diode)

5.7

(Note 3)

I_SM

17.3

Thermal Characteristics

Parameter

Symbol

Value

4.3

Units

P_D

Power Dissipation

Junction-to- Case

Junction-to- Lead

Junction Temperature

(Note 1)

(Note 2)

(Note 5)

(Note 1)

(Note 2)

(Note 5)

(Note 4)

34.4

mW/°C

P_D

10.2

P_D

mW/°C

P_D

2.2

P_D

17.4

mW/°C

℃/W

℃

R _ΘJA

R_θJL

T_J

29.1

12.3

57.3

1.15

-55 to +150

T_STG

Storage Temperature Range

℃

MTM0121A: October 2022 [1.0]

www.gmesemi.com

12 3 4 5

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