Datasheet > BL2N100I

BL2N100I

更新时间： 2024-11-08 17:01:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	726K
描述
2A, 1000V,60W, N Channel, Small Signal MOSFETs

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中文翻译

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数据手册

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BL2N100I 数据手册

N-Channel Enhancement Mode MOSFET

BL2N100I

Features



Low gate charge minimize switching loss



Fast recovery body diode

Mechanical Data



Case: TO-251

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-251

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

2N100I

BL2N100I

TO-251

80 pcs / Tube

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

1000

±30

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current (V_GS= 10V)

Single Pulse Avalanche Energy ^*1

I_DM

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

°C /W

°C

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

2.08

-55 ~ +150

T_STG

°C

MTM1255A: December 2022 [1.1]

www.gmesemi.com

12 3 4 5

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