Datasheet > BL2304

BL2304

更新时间： 2024-04-09 19:00:58

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	542K
描述
2.6A, 30V, 0.75W, N Channel, Power MOSFETs

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BL2304 数据手册

Product Specification

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

BL2304



Electrostatic Sensitive Devices

V_DS(V) = 30V

I_D= 2.6A

R_DS(ON)< 70mΩ (V_GS= 10V)

R_DS(ON)< 105mΩ (V_GS= 4.5V)

APPLICATIONS



N-channel enhancement mode effect transistor



Switching application

SOT-23

ORDERING INFORMATION

Type No.

BL2304

Marking

2304

Package Code

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source voltage

V_GSS

Gate -Source voltage

±20

Continuous Drain Current

@ T_A= 25℃

@ T_A= 70℃

2.6

2.1

I_D

I_DM

E_AS

P_D

Pulsed Drain Current

Single Pulse Avalanche Energy ^*1

Power Dissipation

1.77

0.75

R_θJA

Thermal resistance,Junction-to-Ambient

Junction and Storage Temperature

166

℃/W

T_J, Tstg

-55 to +150

℃

Note 1: Limited by T_Jmax, starting T_J= 25°C, L = 0.1mH, V_DS= 20V, V_GS= 10V

MTM0075A: October 2022 [1.0]

www.gmesemi.com

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