Datasheet > BL1N60

BL1N60

更新时间： 2024-09-25 17:01:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	310K
描述
1.2A, 600V, 40W, N Channel,Power MOSFETs

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BL1N60 数据手册

Product Specification

N-Channel Enhancement Mode Field Effect Transistor

BL1N60

FEATURES



Ultra Low gate charge (typical 5.0nC)

Low reverse transfer capacitance (CRSS = typical 3.0 pF)

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

TO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL1N60

TO-220AB

50pcs / Tube

1N60

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Drain-Source voltage

V_DS

600

±30

Gate -Source voltage

V_GS

Continuous Drain current T_C=25℃

Continuous Drain current T_C=100℃

Single Pulse Avalanche Energy(Note3)

Avalanche Energy,Repetitive(Note2)

Avalanche Current(Note2)

1.2

0.76

I_D

E_AS

E_AR

4.0

I_AR

1.2

ISD

Continuous Drain-Source Current

Pulsed Drain-Source Current

Peak Diode Recovery dv/dt(Note4)

Power Dissipation

1.2

ISM

4.8

dv/dt

4.5

V/ns

P_D

Derating Fcator above 25℃

Junction-to-Case

0.32

W/℃

℃/W

℃

R_θ

Junction-to-Ambient

Junction and Storage Temperature

Maximum Temperature for Soldering

T_J, T_stg

T_L

-55 to +150

+150

℃

MTM0312A

www.gmesemi.com

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