Datasheet > BL18N20B

BL18N20B

更新时间： 2024-04-09 18:58:32

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	494K
描述
200V, N Channel MOSFETs

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数据手册

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BL18N20B 数据手册

N-Channel Enhancement Mode MOSFET

BL18N20 BL18N20B

Features



Super low gate charge

Green device available

Excellent C_dV/ d_teffect decline

Advanced high cell density trench technology

Mechanical Data



Case: TO-220AB, TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-220AB

TO-263

Ordering Information

Part Number

BL18N20

Package

Shipping Quantity

Marking Code

18N20

TO-220AB

TO-263

50 pcs / Tube

BL18N20B

50 pcs / Tube & 800 pcs / Tape & Reel

18N20B

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

200

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current

I_D

I_DM

E_AS

P_D

Single Pulse Avalanche Energy ^*2

Power Dissipation (T_C= 25°C)

Operating Junction Temperature Range

Storage Temperature Range

°C

138

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

R_θJC

0.9

°C /W

MTM0788A: February 2024 [2.1]

www.gmesemi.com

12 3 4 5 6

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