Datasheet > BL160P06-5DL8

BL160P06-5DL8

更新时间： 2024-09-25 17:01:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	634K
描述
-60V, P Channel MOSFETs

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中文翻译

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数据手册

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BL160P06-5DL8 数据手册

P-Channel Enhancement Mode MOSFET

BL160P06-5DL8

Features



Advanced trench technology for ultra-low R_DS(ON)

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

HBM: JESD22-A114-B: 1C

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

160P06

BL160P06-5DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-60

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

-64

-45

I_D

-10.7

-7.6

I_DM

E_AS

P_D

-256

240

°C

136

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +175

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

0.8

1.1

°C /W

MTM1174A: March 2024 [2.1]

www.gmesemi.com

12 3 4 5 6

中文翻译

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