Datasheet > BL120N10THD

BL120N10THD

更新时间： 2024-09-25 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
7页	693K
描述
65A, 100V, 89W, N Channel, Power MOSFETs

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数据手册

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BL120N10THD 数据手册

N-Channel Enhancement Mode MOSFET

BL120N10THD

Features

⚫

Advanced trench cell design

Low gate charge

100% EAS tested

Application

⚫

Motor drivers

⚫

DC-DC converter

Mechanical Data

⚫

Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-252

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

120N10THD

BL120N10THD

TO-252

80 pcs / Tube & 2500 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter Symbol

Drain-to-Source Voltage

Value

Unit

V_DSS

V_GSS

I_D

100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C , V_GS= 10 V) ^*1

Continuous Drain Current (T_C= 100°C, V_GS= 10 V) ^*1

Pulsed Drain Current (T_C= 25°C, V_GS= 10 V) ^{*1, 2}

Single Pulse Avalanche Energy(L = 1mH, V_DD= 50V) ^*1

I_D

I_DM

E_AS

190

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C) ^*1

P_D

R_θJA

R_θJC

T_J

°C /W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Operating Junction Temperature Range

Storage Temperature Range

1.4

-55 ~ +150

T_STG

°C

MTM0458A: April 2021

www.gmesemi.com

12 3 4 5 6 7

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