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BL120N03-3DL8 PDF预览

BL120N03-3DL8

更新时间: 2024-11-14 17:01:59
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 514K
描述
35A, 30V, 25W, N Channel, Power MOSFETs

BL120N03-3DL8 数据手册

 浏览型号BL120N03-3DL8的Datasheet PDF文件第2页浏览型号BL120N03-3DL8的Datasheet PDF文件第3页浏览型号BL120N03-3DL8的Datasheet PDF文件第4页浏览型号BL120N03-3DL8的Datasheet PDF文件第5页 
N-Channel Enhancement Mode MOSFET  
BL120N03-3DL8  
Features  
Super low gate charge  
Green device available  
Excellent cdV / dt effect decline  
Advanced high cell density trench technology  
Mechanical Data  
Case: PDFN3×3-8L  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
PDFN3×3-8L  
Ordering Information  
Part Number  
Package  
PDFN3×3-8L  
Shipping Quantity  
Marking Code  
BL120N03-3DL8  
5000 pcs / Tape & Reel  
120N03  
Maximum Ratings (@ TA = 25unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
30  
±20  
35  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C ) *1  
Continuous Drain Current (TC = 100°C) *1  
Pulsed Drain Current *3  
A
ID  
22  
A
IDM  
140  
18  
A
Single Pulse Avalanche Energy *4  
EAS  
mJ  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TC = 25°C) *3  
PD  
RθJA  
RθJC  
RθJL  
TJ  
25  
W
°C /W  
°C /W  
°C /W  
°C  
Thermal Resistance Junction-to-Air *1  
Thermal Resistance Junction-to-Case *1  
Thermal Resistance Junction-to-Lead *1  
Operating Junction Temperature Range  
Storage Temperature Range  
87  
5
3.8  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0027A: April 2022  
www.gmesemi.com  
1

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