Datasheet > BL1013DW

BL1013DW

更新时间： 2024-09-25 17:01:19

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	495K
描述
-20V, Dual P Channel MOSFETs

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中文翻译

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数据手册

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BL1013DW 数据手册

P-Channel Enhancement Mode MOSFET

BL1013DW

Features



Low On-Resistance

Low gate threshold voltage

Low input capacitance

Fast switching speed

Low input / output leakage

ESD protection up to 2kV (Human body mode)

Mechanical Data



Case: SOT-363

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-363

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL1013DW

SOT-363

3000 pcs / Tape & Reel

PA1

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_DSS

V_GSS

-20

±6

Continuous Drain Current (T_A= 25°C ) ^*1

Continuous Drain Current (T_A= 70°C ) ^*1

-0.78

-0.62

I_D

Pulsed Drain Current ^*4

I_DM

-4.9

Thermal Characteristics

Parameter

Power Dissipation (T_A= 25°C) ^*1

Symbol

P_D

Value

0.54

Unit

Thermal Resistance Junction-to-Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

T_J

230

°C/W

°C

-55 ~ +150

T_STG

°C

MTM0100A: December 2022 [2.0]

www.gmesemi.com

12 3 4 5

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