Datasheet > BL080N10T

BL080N10T

更新时间： 2024-09-25 17:01:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	540K
描述
100A, 100V, 250W, N Channel, Power MOSFETs

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BL080N10T 数据手册

N-Channel Enhancement Mode MOSFET

BL080N10T

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Mechanical Data



Case: TO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-220AB

Ordering Information

Part Number

Package

TO-220AB

Shipping Quantity

Marking Code

BL080N10T

50 pcs / Tube

080N10T

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

100

±20

100

400

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

Single Pulse Avalanche Energy ^*2

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

T_J

250

0.5

°C /W

°C

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM1099A: January 2023 [2.0]

www.gmesemi.com

12 3 4 5

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