Datasheet > BL05N60C

BL05N60C

更新时间： 2024-11-25 17:02:03

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	350K
描述
0.6A, 60V, 0.35W, N Channel, MOSFETs

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BL05N60C 数据手册

Product Specification

N-Channel Enhancement Mode MOSFET

BL05N60C

FEATURES



High density cell design for low R_DS(ON)

Voltage controlled small signal switch

Rugged and reliable

High saturation current capability

APPLICATIONS



N-channel enhancement mode effect transistor



Switching application

SOT-23

ORDERING INFORMATION

Type No.

Marking

05N60

Package Code

SOT-23

BL05N60C

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Drain-Source voltage

Drain-Gate voltage(R_GS≤1MΩ)

Gate -Source voltage - continuous

-Non Repetitive (t_p<50μs)

Value

Units

V_DSS

V_DGR

V_GSS

±20

±40

Maximum Drain current -continuous

-Pulsed

600

I_D

1600

P_D

Power Dissipation

350

R_{ΘjA (NOTE1)}Thermal resistance,Junction-to-Ambient

357

℃/W

R_ΘjC(NOTE1)

T_J, Tstg

Thermal resistance,Junction-to-Case

Junction and Storage Temperature

℃/W

-50 to +150

℃

NOTE1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal

reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is

determind by the user’s board design. The value of RθJA is measured with device mounted on 1 in2 FR-4 board with

2 oz copper.

MTM0016A: November 2019 [P]

ww.gmesemi.com

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