Datasheet > BL055N085TH-5DL8

BL055N085TH-5DL8

更新时间： 2024-04-09 19:00:26

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	936K
描述
120A, 85V, 284W, N Channel, Power MOSFETs

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数据手册

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BL055N085TH-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

BL055N085TH-5DL8

Features



Extremely low on-resistance R_DS(ON

)

Excellent Q_G* R_DS(ON) product(FOM)

Applications



Motor control and drive

Battery management

UPS

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

PDFN5×6-8L

Terminals: Matte Tin-Plated Leads, Solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL055N085TH-5DL8

PDFN5×6-8L

5000 pcs / Tape & Reel

055N085TH

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Symbol

V_DSS

Value

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

138

120

I_D

Pulsed Drain Current (T_C= 25°C, t_plimited by T_J(MAX)

)

I_DM

480

144

Avalanche Energy, Single Pulse (L=0.5mH, R_G=25Ω)

E_AS

Note 1: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper

MTM0351A: October 2022 [1.2]

www.gmesemi.com

12 3 4 5

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