Datasheet > BL055N06T-5DL8

BL055N06T-5DL8

更新时间： 2024-04-09 18:59:29

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	907K
描述
115A, 60V, 125W, N Channel, Power MOSFETs

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BL055N06T-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

BL055N06T-5DL8

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

5000 pcs / Tape & Reel

Marking Code

BL055N06T-5DL8

055N06T

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

±20

115

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C silicon limited)

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current （tp=10us）

Single Pulse Avalanche Energy ^*3

I_D

I_DM

160

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

R_θJA

T_J

125

°C /W

°C

Thermal Resistance Junction-to-Case ^*4

Thermal Resistance Junction-to-Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0861A: September 2023 [1.1]

www.gmesemi.com

12 3 4 5

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