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BL055N04-5DL8 PDF预览

BL055N04-5DL8

更新时间: 2024-11-25 17:01:07
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 1029K
描述
40V, N Channel MOSFETs

BL055N04-5DL8 数据手册

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N-Channel Power MOSFET  
BL055N04-5DL8  
Features  
Fast switching MOSFET for SMPS  
Green device available  
Very low on-resistance RDS(ON)  
Advanced high cell density trench technology  
Mechanical Data  
Case: PDFN5×6-8L  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
BL055N04-5DL8  
PDFN5×6-8L  
100% VDS Tested !  
100% UIS Tested !  
Ordering Information  
Part Number  
Package  
PDFN5×6-8L  
Shipping Quantity  
5000pcs / Tape & Reel  
Marking Code  
BL055N04-5DL8  
055N04  
Maximum Ratings (@ TA = 25unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
40  
±20  
73  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (VGS=10V, TC = 25°C )  
Continuous Drain Current (VGS=10V, TC = 100°C)  
Pulsed Drain Current *2  
A
ID  
46  
A
IDM  
292  
110  
A
Single Pulse Avalanche Energy *3  
EAS  
mJ  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TC = 25°C)  
PD  
50  
50  
W
°C /W  
°C /W  
°C /W  
°C  
Thermal Resistance Junction-to-Air *1  
RθJA  
20  
Thermal Resistance Junction-to-Case top  
bottom  
RθJC  
2.5  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0191A: September 2022 [2.1]  
www.gmesemi.com  
1

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