Datasheet > BL035N04-5DL8

BL035N04-5DL8

更新时间： 2024-04-09 19:03:05

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	939K
描述
100A, 40V, 61W, N Channel, Power MOSFETs

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BL035N04-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

BL035N04-5DL8

Features



Super low gate charge

Green device available

Excellent CdV/dt effect decline

Advanced high cell density Trench technology

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matted-Tin plated; Solderable Per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

035N04

BL035N04-5DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

Unit

±20

100

Gate-to-Source Voltage

V_GSS

Continuous Drain Current (T_C= 25°C ) ^*1

Continuous Drain Current (T_C= 100°C ) ^*1

Pulsed Drain Current ^*2

I_D

I_DM

400

230

Single Pulse Avalanche Energy ^*3

E_AS

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C)

Symbol

P_D

Value

Unit

Thermal Resistance Junction-to-Case ^*1

R_θJC

°C /W

°C

Operating Junction Temperature Range & Storage Temperature Range

T_{J ，}T_STG

-55 ~ +150

MTM0441A: September 2022 [1.1]

www.gmesemi.com

12 3 4 5

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