Datasheet > BL027N04T-5DL8

BL027N04T-5DL8

更新时间： 2025-03-17 17:01:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	1016K
描述
130A, 40V, 73W, N Channel, Power MOSFETs

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数据手册

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BL027N04T-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

BL027N04T-5DL8

Features



Super low R_DS(on) and gate charge

Advanced shielded-gate technology

Green device available

Excellent c_dV/ d_teffect decline

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

BL027N04T-5DL8

5000 pcs / Tape & Reel

027N04T

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

130

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C ) ^*1

Continuous Drain Current (T_C= 100°C ) ^*1

Pulsed Drain Current ^*2

I_D

I_DM

240

102

Single Pulse Avalanche Energy ^*3

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

T_J

°C /W

°C

Thermal Resistance Junction-to-Case ^*1

Operating Junction Temperature Range

Storage Temperature Range

1.7

-55 ~ +150

T_STG

°C

MTM0423A: September 2021 [2.1]

www.gmesemi.com

12 3 4 5

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