Datasheet > BL023N10TH

BL023N10TH

更新时间： 2024-09-25 17:01:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	414K
描述
100V, N Channel MOSFETs

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中文翻译

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数据手册

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BL023N10TH 数据手册

N-Channel Enhancement Mode MOSFET

BL023N10TH

Features



Advanced shielded-gate technology

Ultra low RDS(ON) to minimize conduction losses

Superior thermal resistance

Low power loss, high power density

HBM: JESD22-A114-B: 1C

Mechanical Data



Case: TO-220AB

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-220AB

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL023N10TH

TO-220AB

50 pcs / Tube

023N10TH

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

100

±20

Gate-to-Source Voltage

Continuous Drain Current (Package Limited)

Continuous Drain Current (T_C= 25°C, Silicon Limited)

Continuous Drain Current (T_C= 100°C, Silicon Limited)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*2

180

I_D

280

177

I_DM

E_AS

P_D

720

900

°C

Power Dissipation (T_C= 25°C)

312

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air

R_θJC

R_θJA

0.4

°C /W

MTM1500A: December 2023 [2.0]

www.gmesemi.com

12 3 4 5

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