Datasheet > BL021N04T-5DL8

BL021N04T-5DL8

更新时间： 2024-04-09 19:01:10

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	1200K
描述
40V, N Channel MOSFETs

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中文翻译

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数据手册

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BL021N04T-5DL8 数据手册

N-Channel Enhancement Mode MOSFET

BL021N04T-5DL8

Features



Low gate charge minimize switching loss



Fast recovery body diode

Mechanical Data



Case: PDFN5×6-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN5×6-8L

Ordering Information

Part Number

Package

PDFN5×6-8L

Shipping Quantity

Marking Code

021N04T

BL021N04T-5DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter Symbol

Drain-to-Source Voltage

Value

Unit

V_DSS

V_GSS

I_D

Gate-to-Source Voltage

±20

140

100

Continuous Drain Current (T_C= 25°C ，silicon limited)

Continuous Drain Current (T_C= 25°C ，package limited)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p=10us, T_A= 25°C )

Single Pulse Avalanche Energy ^*2

I_D

I_DM

E_AS

320

120

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

62.5

Power Dissipation (T_A= 25°C)

3.4

Thermal Resistance Junction-to-Air ^*3

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

°C

-55 ~ +150

T_STG

°C

MTM0944A: September 2022 [2.1]

www.gmesemi.com

12 3 4 5

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