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BL020N04T PDF预览

BL020N04T

更新时间: 2024-11-14 17:01:59
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 524K
描述
100A, 40V,156W, N Channel, Power MOSFETs

BL020N04T 数据手册

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N-Channel Enhancement Mode MOSFET  
BL020N04T  
Features  
Super low RDS(on) and gate charge  
Advanced shielded-gate technology  
Green device available  
Mechanical Data  
Case: TO-220AB  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
TO-220AB  
Ordering Information  
Part Number  
Package  
TO-220AB  
Shipping Quantity  
Marking Code  
BL020N04T  
50 pcs / Tube  
020N04T  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
40  
V
V
Gate-to-Source Voltage  
±20  
100  
220  
140  
880  
65  
Continuous Drain Current (Package limit) TC = 25°C  
Continuous Drain Current (Silicon limit) TC = 25°C  
Continuous Drain Current (Silicon limit) TC = 100°C  
Pulsed Drain Current (tp < 10μs)  
A
*1  
ID  
A
A
IDM  
A
Single Pulse Avalanche Energy *3  
EAS  
mJ  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TC = 25°C)  
PD  
RθJC  
RθJA  
TJ  
156  
0.8  
W
°C /W  
°C /W  
°C  
Thermal Resistance Junction-to-Case *1  
Thermal Resistance Junction-to-Air  
Operating Junction Temperature Range  
Storage Temperature Range  
50  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
MTM0807A: June 2022  
www.gmesemi.com  
1

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