Datasheet > BGS12PL6

BGS12PL6

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		GSM LTE
页数	文件大小	规格书
15页	3651K
描述
The BGS12PL6 general purpose RF MOS power switch is designed to cover a broad range of high power applications from 30 MHz to 4 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The symmetric design of its single pole double throw configuration, as shown in Figure 1 (see datasheet)?offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 35 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.36 dB in the 1 GHz, 0.46 dB in the 2 GHz and 0.6 dB in the 3 GHz range.

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BGS12PL6 数据手册

BGS12PL6

General purpose RF CMOS power SPDT Switch

in ultra small package with 0.77mm²footprint

Data Sheet

Revision 2.5, 2015-04-08

Power Management & Multimarket

12 3 4 5 6 7...15

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