Datasheet > BFY650B-12(P)

BFY650B-12(P)

更新时间： 2024-11-25 11:13:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	388K
描述
HiRel Silicon Bipolar Transistor technology

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中文翻译

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数据手册

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BFY650B-12(P) 数据手册

BFY650B-12

HiRel NPN Silicon RF Transistor

BFY650B-12(ES)

Features

 For high power amplifiers

 Ideal for low phase noise oscilators

 Maximum available gain: G_ma= 18 dB at 1.8 GHz

Noise figure F = 0.8 dB at 1.8 GHz

 Hermetically sealed microwave package

Product validation



Space Qualified

ESCC Detail Spec. No.: 5611/010

Type Variant No. 05

Description

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Table 1

Type

Product information

Comment

Pin Configuration

Package

BFY650B-12(ES)

BFY650B-12(P)¹

For flight use

Not for flight use¹

Micro-X

¹(P) parts have the same fit, form and function as (ES) parts,

no screening acc. to Chart F3 in ESCC Generic Specification No. 5010

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

1 of 6

IFAG PSS RFS D2 HIR

Issue 3, January 2022

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