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BFY650B-11 (ES) PDF预览

BFY650B-11 (ES)

更新时间: 2024-11-25 14:56:31
品牌 Logo 应用领域
英飞凌 - INFINEON 微波晶体管
页数 文件大小 规格书
6页 385K
描述
高可靠性微波晶体管

BFY650B-11 (ES) 数据手册

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BFY650B-11  
HiRel NPN Silicon RF Transistor  
BFY650B-11(ES)  
4
1
3
2
Features  
For high power amplifiers  
Ideal for low phase noise oscilators  
Maximum available gain: Gma = 19 dB at 1.8 GHz  
Noise figure F = 0.9 dB at 1.8 GHz  
Hermetically sealed microwave package  
Product validation  
Space Qualified  
ESCC Detail Spec. No.: 5611/010  
Type Variant No. 04  
Description  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Table 1  
Type  
Product information  
Comment  
Pin Configuration  
Package  
1
2
3
4
BFY650B-11(ES)  
BFY650B-11(P)1  
For flight use  
Not for flight use1  
C
E
B
E
Micro-X  
1 (P) parts have the same fit, form and function as (ES) parts,  
no screening acc. to Chart F3 in ESCC Generic Specification No. 5010  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
1 of 6  
IFAG PSS RFS D2 HIR  
Issue 5, January 2022  
 
 
 

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