BFY640H

更新时间： 2024-11-20 13:05:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号双极晶体管射频小信号双极晶体管放大器
页数	文件大小	规格书
3页	136K
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BFY640H 数据手册

BFY640

HiRel NPN Silicon Germanium RF Transistor

 HiRel Discrete and Microwave Semiconductor

 High gain low noise RF transistor

 High maximum stable gain: G_ms24dB at 1.8 GHz

 Noise figure F = 0.8 dB at 1.8 GHz

Noise figure F = 1.1 dB at 6 GHz

 Hermetically sealed microwave package

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking Pin Configuration

Package

BFY640B

Micro-X

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

T_a> 0 °C

T_a≤ 0 °C

V_CEO

4.0

3.7

Collector-base voltage

Emitter-base voltage

Collector current ¹⁾

V_CBO

V_EBO

I_C

1.2

C

Base current

I_B

Junction temperature

Operating temperature range

Storage temperature range

Thermal Resistance

Junction-soldering point ²⁾

T_j

175

T_op

T_stg

-65...+175

R_{th JS}

K/W

325

Notes.:

1) For T_A> 25°C the derating of I_Chas to be considered. Nomograms will be available on request.

2) T_Sis measured on the emittter lead at the soldering point to the pcb.

IFAG IMM RPD D HIR

1 of 3

V1, June 2010

12 3

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