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BFY640H PDF预览

BFY640H

更新时间: 2024-11-05 13:05:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管射频小信号双极晶体管放大器
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3页 136K
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BFY640H 数据手册

 浏览型号BFY640H的Datasheet PDF文件第2页浏览型号BFY640H的Datasheet PDF文件第3页 
BFY640  
HiRel NPN Silicon Germanium RF Transistor  
4
1
3
HiRel Discrete and Microwave Semiconductor  
High gain low noise RF transistor  
High maximum stable gain: Gms 24dB at 1.8 GHz  
Noise figure F = 0.8 dB at 1.8 GHz  
2
Noise figure F = 1.1 dB at 6 GHz  
Hermetically sealed microwave package  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Type  
Marking Pin Configuration  
Package  
1
2
3
4
BFY640B  
-
C
E
B
E
Micro-X  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Ta > 0 °C  
Ta ≤ 0 °C  
VCEO  
4.0  
3.7  
V
V
Collector-base voltage  
Emitter-base voltage  
Collector current 1)  
VCBO  
VEBO  
IC  
13  
1.2  
50  
3
V
V
mA  
mA  
C  
C  
C  
Base current  
IB  
Junction temperature  
Operating temperature range  
Storage temperature range  
Thermal Resistance  
Junction-soldering point 2)  
Tj  
175  
Top  
Tstg  
-65...+175  
-65...+175  
Rth JS  
K/W  
325  
Notes.:  
1) For TA > 25°C the derating of IC has to be considered. Nomograms will be available on request.  
2) TS is measured on the emittter lead at the soldering point to the pcb.  
IFAG IMM RPD D HIR  
1 of 3  
V1, June 2010  

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