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BFY64004ESZZZA1 PDF预览

BFY64004ESZZZA1

更新时间: 2024-11-24 14:48:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
3页 173K
描述
RF Small Signal Bipolar Transistor,

BFY64004ESZZZA1 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.78
Base Number Matches:1

BFY64004ESZZZA1 数据手册

 浏览型号BFY64004ESZZZA1的Datasheet PDF文件第2页浏览型号BFY64004ESZZZA1的Datasheet PDF文件第3页 
BFY640  
HiRel NPN Silicon Germanium RF Transistor  
4
1
3
HiRel Discrete and Microwave Semiconductor  
High gain low noise RF transistor  
High maximum stable gain: Gms 24dB at 1.8 GHz  
Noise figure F = 0.8 dB at 1.8 GHz  
2
Noise figure F = 1.1 dB at 6 GHz  
Hermetically sealed microwave package  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Type  
Marking Pin Configuration  
Package  
1
2
3
4
BFY640B  
-
C
E
B
E
Micro-X  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Ta > 0 °C  
Ta ≤ 0 °C  
VCEO  
4.0  
3.7  
V
V
Collector-base voltage  
Emitter-base voltage  
Collector current 1)  
VCBO  
VEBO  
IC  
13  
1.2  
50  
3
V
V
mA  
mA  
C  
C  
C  
Base current  
IB  
Junction temperature  
Operating temperature range  
Storage temperature range  
Thermal Resistance  
Junction-soldering point 2)  
Tj  
175  
Top  
Tstg  
-65...+175  
-65...+175  
Rth JS  
K/W  
325  
Notes.:  
1) For T ≤ 110°C. For T > 110 °C derating is required.  
S
S
2) TS is measured on the emittter lead at the soldering point to the pcb.  
IFAG IMM RPD D HIR  
1 of 3  
V2, August 2011  

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