Datasheet > BFY64004ESZZZA1

BFY64004ESZZZA1

更新时间： 2024-11-05 14:48:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
3页	173K
描述
RF Small Signal Bipolar Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BFY64004ESZZZA1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.78
Base Number Matches：	1

BFY64004ESZZZA1 数据手册

BFY640

HiRel NPN Silicon Germanium RF Transistor

 HiRel Discrete and Microwave Semiconductor

 High gain low noise RF transistor

 High maximum stable gain: G_ms24dB at 1.8 GHz

 Noise figure F = 0.8 dB at 1.8 GHz

Noise figure F = 1.1 dB at 6 GHz

 Hermetically sealed microwave package

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking Pin Configuration

Package

BFY640B

Micro-X

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

T_a> 0 °C

T_a≤ 0 °C

V_CEO

4.0

3.7

Collector-base voltage

Emitter-base voltage

Collector current ¹⁾

V_CBO

V_EBO

I_C

1.2

C

Base current

I_B

Junction temperature

Operating temperature range

Storage temperature range

Thermal Resistance

Junction-soldering point ²⁾

T_j

175

T_op

T_stg

-65...+175

R_{th JS}

K/W

325

Notes.:

1) For T ≤ 110°C. For T > 110 °C derating is required.

2) T_Sis measured on the emittter lead at the soldering point to the pcb.

IFAG IMM RPD D HIR

1 of 3

V2, August 2011

12 3

中文翻译

下载PDF

与BFY64004ESZZZA1相关器件

型号	品牌	获取价格	描述	数据表
BFY640B	INFINEON	获取价格	HiRel NPN Silicon Germanium RF Transistor
BFY640ES	INFINEON	获取价格	Transistor
BFY640H	INFINEON	获取价格	暂无描述
BFY640P	INFINEON	获取价格	Transistor
BFY640S	INFINEON	获取价格	Transistor
BFY64LEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PI
BFY650B-11 (ES)	INFINEON	获取价格	高可靠性微波晶体管
BFY650B-11 (P)	INFINEON	获取价格	高可靠性微波晶体管
BFY650B-12(ES)	INFINEON	获取价格	HiRel Silicon Bipolar Transistor technology
BFY650B-12(P)	INFINEON	获取价格	HiRel Silicon Bipolar Transistor technology