Datasheet > BFY640-04(P)

BFY640-04(P)

更新时间： 2024-11-20 14:48:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
3页	173K
描述
RF Small Signal Bipolar Transistor

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技术参数
数据手册

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BFY640-04(P) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.78	Base Number Matches：	1

BFY640-04(P) 数据手册

BFY640

HiRel NPN Silicon Germanium RF Transistor

 HiRel Discrete and Microwave Semiconductor

 High gain low noise RF transistor

 High maximum stable gain: G_ms24dB at 1.8 GHz

 Noise figure F = 0.8 dB at 1.8 GHz

Noise figure F = 1.1 dB at 6 GHz

 Hermetically sealed microwave package

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking Pin Configuration

Package

BFY640B

Micro-X

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

T_a> 0 °C

T_a≤ 0 °C

V_CEO

4.0

3.7

Collector-base voltage

Emitter-base voltage

Collector current ¹⁾

V_CBO

V_EBO

I_C

1.2

C

Base current

I_B

Junction temperature

Operating temperature range

Storage temperature range

Thermal Resistance

Junction-soldering point ²⁾

T_j

175

T_op

T_stg

-65...+175

R_{th JS}

K/W

325

Notes.:

1) For T ≤ 110°C. For T > 110 °C derating is required.

2) T_Sis measured on the emittter lead at the soldering point to the pcb.

IFAG IMM RPD D HIR

1 of 3

V2, August 2011

12 3

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