是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-39 |
包装说明: | TO-39, 3 PIN | 针数: | 3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.33 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JEDEC-95代码: | TO-39 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.8 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFY52D | ZETEX |
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Transistor | |
BFY52DWP | ZETEX |
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Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, 0.026 X 0.031 INCH | |
BFY52LEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PI | |
BFY53 | ONSEMI |
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TRANSISTOR TRANSISTOR,BJT,NPN,20V V(BR)CEO,1A I(C),TO-5, BIP General Purpose Small Signal | |
BFY55 | CENTRAL |
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Small Signal Transistors | |
BFY55 | ONSEMI |
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TRANSISTOR TRANSISTOR,BJT,NPN,35V V(BR)CEO,1A I(C),TO-39, BIP General Purpose Small Signal | |
BFY55 | NJSEMI |
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Trans GP BJT NPN 35V 3-Pin TO-39 Box | |
BFY55LEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PI | |
BFY56 | SEME-LAB |
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Bipolar NPN Device in a Hermetically sealed TO39 | |
BFY56 | ONSEMI |
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TRANSISTOR TRANSISTOR,BJT,NPN,45V V(BR)CEO,1A I(C),TO-39, BIP General Purpose Small Signal |