Datasheet > BFX89_12

BFX89_12

更新时间： 2024-12-01 12:53:15

品牌	Logo	应用领域
COMSET		放大器
页数	文件大小	规格书
4页	79K
描述
WIDE BAND VHF/UHF AMPLIFIER

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中文翻译

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数据手册

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BFX89_12 数据手册

BFX89 – BFY90

WIDE BAND VHF/UHF AMPLIFIER

DESCRIPTION :

•

SILICON PLANAR EPITAXIAL

TRANSISTORS

•

TO-72 METAL CASE

VERY LOW NOISE

APPLICATIONS :

•

TELECOMMUNICATIONS

WIDE BAND UHF AMPLIFIER

RADIO COMMUNICATIONS

The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using

interdigitated base emitter geometry. They are particulary designed for use in wide band

common-emitter linear amplifiers up to 1 GHz. They feature very high f_T, low reverse

capacitance, excellent cross modulation properties and very low noise performance. The

BFY90 is complementary to the BFR99A. Typical applications include telecommunication

and radio communication equipment.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CEO

V_CER

V_CBO

V_EBO

I_C

Collector-Emitter Voltage ( IB = 0)

Collector-Emitter Voltage ( RBE ≤50Ω )

Collector-Base Voltage ( IE= 0)

Collector-Base Voltage ( IC = 0)

Collector Current

2.5

°C

I_CM

Collector Peak Current

Ptot

Tstg, Tj

200

Total Power Dissipation at Tamb ≤ 25 °C

Storage and Junction Temperature

-65 to 200

25/10/2012

COMSET SEMICONDUCTORS

1/4

12 3 4

中文翻译

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