Datasheet > BFR540T/R

BFR540T/R

更新时间： 2024-02-05 23:42:30

品牌	Logo	应用领域
恩智浦 - NXP		放大器光电二极管晶体管
页数	文件大小	规格书
13页	91K
描述
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SOT-23, 3 PIN, BIP RF Small Signal

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中文翻译

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技术参数
数据手册

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BFR540T/R 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.83
最大集电极电流 (IC)：	0.12 A	配置：	Single
最小直流电流增益 (hFE)：	60	JESD-609代码：	e3
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.5 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn)

BFR540T/R 数据手册

BFR540

NPN 9 GHz wideband transistor

Rev. 05 — 1 September 2004

Product data sheet

1. Product proﬁle

1.1 General description

The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.

1.2 Features

■ High power gain

■ Low noise ﬁgure

■ High transition frequency

■ Gold metallization ensures excellent reliability.

1.3 Applications

■ RF front end wideband applications in the GHz range

◆ Analog and digital cellular telephones

◆ Cordless telephones (CT1, CT2, DECT, etc.)

◆ Radar detectors

◆ Satellite TV tuners (SATV)

◆ MATV/CATV ampliﬁers

◆ Repeater ampliﬁers in ﬁber-optic systems.

1.4 Quick reference data

Table 1:

Quick reference data

Symbol Parameter

Conditions

collector-base voltage open emitter

Min

Typ

Max

Unit

V_CBO

V_CES

collector-emitter

voltage

R_BE= 0 Ω

I_C

collector current (DC)

total power dissipation

DC current gain

120

500

250

[1]

P_tot

h_FE

C_re

_sp≤ 70 °C

I_C= 40 mA; V_CE= 8 V

100

120

0.6

feedback capacitance I_C= i_c= 0 A; V_CB= 8 V;

f = 1 MHz

f_T

transition frequency

I_C= 40 mA; V_CE= 8 V;

f = 1 GHz

GHz

G_UM

maximum unilateral

power gain

I_C= 40 mA; V_CE= 8 V;

_amb= 25 °C

f = 900 MHz

f = 2 GHz

12 3 4 5 6 7...13

中文翻译

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