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BFR540,235 PDF预览

BFR540,235

更新时间: 2024-01-24 18:50:46
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 91K
描述
BFR540 - NPN 9 GHz wideband transistor TO-236 3-Pin

BFR540,235 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-236
针数:3Reach Compliance Code:compliant
风险等级:5.56Base Number Matches:1

BFR540,235 数据手册

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BFR540  
NPN 9 GHz wideband transistor  
Rev. 05 — 1 September 2004  
Product data sheet  
1. Product profile  
1.1 General description  
The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.  
1.2 Features  
High power gain  
Low noise figure  
High transition frequency  
Gold metallization ensures excellent reliability.  
1.3 Applications  
RF front end wideband applications in the GHz range  
Analog and digital cellular telephones  
Cordless telephones (CT1, CT2, DECT, etc.)  
Radar detectors  
Satellite TV tuners (SATV)  
MATV/CATV amplifiers  
Repeater amplifiers in fiber-optic systems.  
1.4 Quick reference data  
Table 1:  
Quick reference data  
Symbol Parameter  
Conditions  
collector-base voltage open emitter  
Min  
Typ  
Max  
20  
Unit  
V
VCBO  
VCES  
-
-
-
-
collector-emitter  
voltage  
RBE = 0 Ω  
15  
V
IC  
collector current (DC)  
total power dissipation  
DC current gain  
-
-
120  
500  
250  
-
mA  
[1]  
Ptot  
hFE  
Cre  
T
sp 70 °C  
-
-
mW  
IC = 40 mA; VCE = 8 V  
100  
-
120  
0.6  
feedback capacitance IC = ic = 0 A; VCB = 8 V;  
f = 1 MHz  
pF  
fT  
transition frequency  
IC = 40 mA; VCE = 8 V;  
f = 1 GHz  
-
9
-
GHz  
GUM  
maximum unilateral  
power gain  
IC = 40 mA; VCE = 8 V;  
T
amb = 25 °C  
f = 900 MHz  
f = 2 GHz  
-
-
14  
7
-
-
dB  
dB  
 
 
 
 

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