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BFR183F PDF预览

BFR183F

更新时间: 2024-11-11 03:21:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 53K
描述
NPN Silicon RF Transistor

BFR183F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.62Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.065 A
基于收集器的最大容量:0.54 pF集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):70
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.45 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHzBase Number Matches:1

BFR183F 数据手册

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BFR183F  
NPN Silicon RF Transistor*  
For low noise, high-gain broadband amplifiers at  
2
3
collector currents from 2 mA to 30 mA  
1
f = 8 GHz, F = 0.9 dB at 900 MHz  
T
* Short term description  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Marking  
Pin Configuration  
Package  
BFR183F  
RHs  
TSFP-3  
1=B  
2=E  
3=C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
12  
20  
20  
2
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
65  
5
mA  
mW  
°C  
I
I
C
Base current  
B
1)  
450  
Total power dissipation  
P
tot  
T 62 °C  
S
150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
j
-65 ... 150  
-65 ... 150  
A
stg  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
2)  
K/W  
Junction - soldering point  
1
R
195  
thJS  
T is measured on the collector lead at the soldering point to the pcb  
S
2
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
2005-10-14  
1

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