是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.62 | Is Samacsys: | N |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.065 A |
基于收集器的最大容量: | 0.54 pF | 集电极-发射极最大电压: | 12 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 70 |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-F3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.45 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 8000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFR18-3P1 | ITT |
获取价格 |
Circular Connector Adapter, 2 Contact(s), Male-Male | |
BFR183T | VISHAY |
获取价格 |
Silicon NPN Planar RF Transistor | |
BFR183T | INFINEON |
获取价格 |
NPN Silicon RF Transistor | |
BFR183T | TEMIC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, | |
BFR183TF | VISHAY |
获取价格 |
Silicon NPN Planar RF Transistor | |
BFR183T-GS08 | TEMIC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, | |
BFR183T-GS18 | TEMIC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC | |
BFR183TW | VISHAY |
获取价格 |
Silicon NPN Planar RF Transistor | |
BFR183W | INFINEON |
获取价格 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector curr | |
BFR183W_07 | INFINEON |
获取价格 |
NPN Silicon RF Transistor |