Datasheet > BFR182W_10

BFR182W_10

更新时间： 2024-01-11 12:38:06

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	514K
描述
NPN Silicon RF Transistor

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中文翻译

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数据手册

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BFR182W_10 数据手册

BFR182W

NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at

collector currents from 1 mA to 20 mA

• f = 8 GHz, F = 0.9 dB at 900 MHz

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR182W

Marking

RGs

Pin Configuration

2=E 3=C

Package

SOT323

1=B

Maximum Ratings at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

250

tot

T ≤ 90 °C

150

-55 ... 150

Junction temperature

Ambient temperature

Storage temperature

Stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 240

Unit

K/W

thJS

¹T is measured on the collector lead at the soldering point to the pcb

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2010-04-06

12 3 4 5 6 7

中文翻译

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