5秒后页面跳转
BFR182TW PDF预览

BFR182TW

更新时间: 2024-11-10 22:27:35
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
4页 71K
描述
Silicon NPN Planar RF Transistor

BFR182TW 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.04最大集电极电流 (IC):0.035 A
配置:Single最小直流电流增益 (hFE):50
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):7500 MHz
Base Number Matches:1

BFR182TW 数据手册

 浏览型号BFR182TW的Datasheet PDF文件第2页浏览型号BFR182TW的Datasheet PDF文件第3页浏览型号BFR182TW的Datasheet PDF文件第4页 
BFR182T/BFR182TW  
Vishay Telefunken  
Silicon NPN Planar RF Transistor  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
For low noise and high gain broadband amplifiers at  
collector currents from 1 mA to 20 mA.  
Features  
Low noise figure  
High power gain  
1
1
13 652  
13 570  
13 581  
94 9280  
2
3
2
3
BFR182T Marking: RG  
Plastic case (SOT 23)  
BFR182TW Marking: WRG  
Plastic case (SOT 323)  
1 = Collector, 2 = Base, 3 = Emitter  
1 = Collector, 2 = Base, 3 = Emitter  
Absolute Maximum Ratings  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
Value  
Unit  
V
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
CBO  
V
CEO  
V
EBO  
15  
10  
2
35  
5
V
I
C
mA  
mA  
mW  
C
Base current  
I
B
Total power dissipation  
Junction temperature  
Storage temperature range  
T
60 C  
P
tot  
200  
150  
–65 to +150  
amb  
T
j
T
stg  
C
Maximum Thermal Resistance  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
R
thJA  
Value  
450  
Unit  
K/W  
3
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm  
plated with 35 m Cu  
Document Number 85025  
Rev. 2, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

与BFR182TW相关器件

型号 品牌 获取价格 描述 数据表
BFR182W INFINEON

获取价格

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector curr
BFR182W_10 INFINEON

获取价格

NPN Silicon RF Transistor
BFR182WH6327XTSA1 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ROHS COM
BFR183 INFINEON

获取价格

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector curr
BFR183_07 INFINEON

获取价格

NPN Silicon RF Transistor
BFR183E6327 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
BFR183E6327HTSA1 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
BFR183F INFINEON

获取价格

NPN Silicon RF Transistor
BFR18-3P1 ITT

获取价格

Circular Connector Adapter, 2 Contact(s), Male-Male
BFR183T VISHAY

获取价格

Silicon NPN Planar RF Transistor