BFR182TF

更新时间： 2024-11-11 06:42:03

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
4页	72K
描述
Silicon NPN Planar RF Transistor

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BFR182TF 数据手册

BFR182TF

Vishay Semiconductors

VISHAY

Silicon NPN Planar RF Transistor

Description

The main purpose of this bipolar transistor is broad-

band amplification up to 2 GHz. In the space-saving

3-pin surface-mount SOT490 package electrical per-

formance and reliability are taken to a new level cov-

ering a smaller footprint on PC boards than previous

packages. In addition to space savings, the SOT490

provides a higher level of reliability than other 3-pin

packages, such as more resistance to moisture. Due

to the short length of its leads the SOT490 is also re-

ducing package inductances resulting in some better

electrical performance. All of these aspects make this

device an ideal choice for demanding RF applica-

tions.

16867

Electrostatic sensitive device.

Observe precautions for handling.

Features

Mechanical Data

Typ: BFR182TF

Case: Plastic case (SOT 490)

Weight: 2.5 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

• Small feedback capacitance

• Low noise figure

• High power gain

Applications

For low noise and high gain broadband amplifiers at

collector currents from 1 mA to 20 mA.

Parts Table

Part

Marking

Package

SOT490

BFR182TF

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

°C

Base current

I_B

200

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 60 °C

P_tot

T_j

150

T_stg

- 65 to + 150

°C

Maximum Thermal Resistance

Parameter

Test condition

Symbol

R_thJA

Value

450

Unit

K/W

Junction ambient

¹⁾on glass fibre printed board (25 x 20 x 1.5) mm³plated with 35 µm Cu

Document Number 85101

Rev. 2, 23-Sep-02

www.vishay.com

12 3 4

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