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BFR182T_08 PDF预览

BFR182T_08

更新时间: 2024-11-18 06:42:03
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
6页 203K
描述
Silicon NPN Planar RF Transistor

BFR182T_08 数据手册

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Not for new design, this product will be obsoleted soon  
BFR182T / BFR182TW  
Vishay Semiconductors  
Silicon NPN Planar RF Transistor  
Features  
1
• Low noise figure  
• High power gain  
e3  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
3
2
1
Applications  
For low noise and high gain broadband amplifiers at  
collector currents from 1 mA to 20 mA.  
2
3
Mechanical Data  
Typ: BFR182T  
Electrostatic sensitive device.  
Case: SOT-23 Plastic case  
Weight: approx. 8.0 mg  
Marking: RG  
Observe precautions for handling.  
13581  
Pinning: 1 = Collector, 2 = Base, 3 = Emitter  
Typ: BFR182TW  
Case: SOT-323 Plastic case  
Weight: approx. 6.0 mg  
Marking: WRG  
Pinning: 1 = Collector, 2 = Base, 3 = Emitter  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VCBO  
Value  
15  
Unit  
Collector-base voltage  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCEO  
VEBO  
IC  
10  
2
V
35  
mA  
mA  
mW  
°C  
°C  
Base current  
IB  
5
200  
Total power dissipation  
Junction temperature  
Storage temperature range  
Tamb 60 °C  
Ptot  
Tj  
150  
Tstg  
- 65 to + 150  
Maximum Thermal Resistance  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
450  
Unit  
K/W  
1)  
Junction ambient  
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu  
Document Number 85025  
Rev. 1.4, 08-Sep-08  
www.vishay.com  
1

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