Datasheet > BFR182T_08

BFR182T_08

更新时间： 2024-02-09 19:44:44

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
6页	203K
描述
Silicon NPN Planar RF Transistor

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数据手册

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BFR182T_08 数据手册

Not for new design, this product will be obsoleted soon

BFR182T / BFR182TW

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Features

• Low noise figure

• High power gain

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

For low noise and high gain broadband amplifiers at

collector currents from 1 mA to 20 mA.

Mechanical Data

Typ: BFR182T

Electrostatic sensitive device.

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Marking: RG

Observe precautions for handling.

13581

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Typ: BFR182TW

Case: SOT-323 Plastic case

Weight: approx. 6.0 mg

Marking: WRG

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

°C

Base current

I_B

200

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 60 °C

P_tot

T_j

150

T_stg

- 65 to + 150

Maximum Thermal Resistance

Parameter

Test condition

Symbol

R_thJA

Value

450

Unit

K/W

Junction ambient

¹⁾on glass fibre printed board (25 x 20 x 1.5) mm³plated with 35 μm Cu

Document Number 85025

Rev. 1.4, 08-Sep-08

www.vishay.com

12 3 4 5 6

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