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BFR182T PDF预览

BFR182T

更新时间: 2024-11-10 22:27:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
7页 72K
描述
NPN Silicon RF Transistor

BFR182T 数据手册

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BFR182T  
NPN Silicon RF Transistor  
Preliminary data  
3
For low noise, high-gain broadband amplifiers at  
collector currents from 1 mA to 20 mA  
f = 8 GHz  
T
F = 1.2 dB at 900 MHz  
2
1
VPS05996  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking  
Pin Configuration  
Package  
BFR182T  
RGs  
1 = B  
2 = E  
3 = C  
SC75  
Maximum Ratings  
Parameter  
Symbol  
Value  
12  
Unit  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
V
CEO  
CES  
CBO  
EBO  
20  
20  
2
I
35  
mA  
mW  
°C  
C
Base current  
I
4
B
P
250  
Total power dissipation  
tot  
1)  
T
S
75°C  
Junction temperature  
Ambient temperature  
Storage temperature  
T
j
150  
T
T
-65 ... 150  
-65 ... 150  
A
stg  
Thermal Resistance  
2)  
K/W  
Junction - soldering point  
R
300  
thJS  
1
T is measured on the collector lead at the soldering point to the pcb  
S
2
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
1
Aug-09-2001  

BFR182T 替代型号

型号 品牌 替代类型 描述 数据表
2N3839LEADFREE CENTRAL

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RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Sili

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