BFR182T

更新时间： 2024-02-18 00:25:54

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
4页	71K
描述
Silicon NPN Planar RF Transistor

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中文翻译

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数据手册

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BFR182T 数据手册

BFR182T/BFR182TW

Vishay Telefunken

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For low noise and high gain broadband amplifiers at

collector currents from 1 mA to 20 mA.

Features

Low noise figure

High power gain

13 652

13 570

13 581

94 9280

BFR182T Marking: RG

Plastic case (SOT 23)

BFR182TW Marking: WRG

Plastic case (SOT 323)

1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

Base current

Total power dissipation

Junction temperature

Storage temperature range

≤ 60 C

tot

200

150

–65 to +150

amb

stg

Maximum Thermal Resistance

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

thJA

Value

450

Unit

K/W

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35 m Cu

Document Number 85025

Rev. 2, 20-Jan-99

www.vishay.de • FaxBack +1-408-970-5600

1 (4)

12 3 4

中文翻译

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