5秒后页面跳转
BFR181WH6327XTSA1 PDF预览

BFR181WH6327XTSA1

更新时间: 2024-11-11 14:49:11
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
6页 665K
描述
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

BFR181WH6327XTSA1 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.59
Is Samacsys:N最大集电极电流 (IC):0.02 A
基于收集器的最大容量:0.45 pF集电极-发射极最大电压:12 V
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
参考标准:AEC-Q101表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHzBase Number Matches:1

BFR181WH6327XTSA1 数据手册

 浏览型号BFR181WH6327XTSA1的Datasheet PDF文件第2页浏览型号BFR181WH6327XTSA1的Datasheet PDF文件第3页浏览型号BFR181WH6327XTSA1的Datasheet PDF文件第4页浏览型号BFR181WH6327XTSA1的Datasheet PDF文件第5页浏览型号BFR181WH6327XTSA1的Datasheet PDF文件第6页 
BFR181W  
Low Noise Silicon Bipolar RF Transistor  
For low noise, high-gain broadband amplifiers at  
collector currents from 0.5 mA to 12 mA  
3
2
1
f = 8 GHz, NF  
= 0.9 dB at 900 MHz  
min  
T
Easy to use Pb-free (RoHS compliant) and halogen  
free industry standard package with visible leads  
Qualification report according to AEC-Q101 available  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFR181W  
Marking  
RFs  
Pin Configuration  
2=E 3=C  
Package  
SOT323  
1=B  
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
12  
20  
20  
2
20  
2
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
mA  
mW  
°C  
I
C
Base current  
Total power dissipation  
I
B
1)  
175  
P
tot  
T 90 °C  
S
150  
-65 ... 150  
-65 ... 150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
J
T
A
T
Stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
345  
Unit  
K/W  
2)  
R
thJS  
1
T is measured on the collector lead at the soldering point of the pcb  
S
2
For the definition of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJS  
2014-04-07  
1

与BFR181WH6327XTSA1相关器件

型号 品牌 获取价格 描述 数据表
BFR182 INFINEON

获取价格

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector curr
BFR182_07 INFINEON

获取价格

NPN Silicon RF Transistor
BFR18-22P1 ITT

获取价格

Circular Connector Adapter, 3 Contact(s), Male-Male
BFR18-22S1 ITT

获取价格

Circular Connector Adapter, 3 Contact(s), Female-Female
BFR182E6327 ROCHESTER

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
BFR182E6327HTSA1 INFINEON

获取价格

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
BFR182T VISHAY

获取价格

Silicon NPN Planar RF Transistor
BFR182T INFINEON

获取价格

NPN Silicon RF Transistor
BFR182T_08 VISHAY

获取价格

Silicon NPN Planar RF Transistor
BFR182TF VISHAY

获取价格

Silicon NPN Planar RF Transistor