Datasheet > BFR181W_10

BFR181W_10

更新时间： 2024-11-21 08:52:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	506K
描述
NPN Silicon RF Transistor

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BFR181W_10 数据手册

BFR181W

NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at

collector currents from 0.5 mA to 12 mA

• f = 8 GHz, NF

= 0.9 dB at 900 MHz

min

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR181W

Marking

RFs

Pin Configuration

Package

SOT323

1=B

2=E

3=C

Maximum Ratings at T = 25 °C

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

175

tot

T ≤ 90 °C

150

-65 ... 150

Junction temperature

Storage temperature

Stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 345

Unit

K/W

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

please refer to Application Note AN077 Thermal Resistance

thJA

2010-10-08

12 3 4 5 6

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