Datasheet > BFR181TW-GS18

BFR181TW-GS18

更新时间： 2024-11-18 14:48:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	256K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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BFR181TW-GS18 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
最大集电极电流 (IC)：	0.02 A	配置：	Single
最小直流电流增益 (hFE)：	50	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.16 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

BFR181TW-GS18 数据手册

BFR181T / BFR181TW

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Features

• Low noise figure

• High power gain

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

For low noise and high gain broadband amplifiers at

collector currents from 0.5 mA to 12 mA.

Mechanical Data

Typ: BFR181T

Electrostatic sensitive device.

Case: SOT-23 Plastic case

Weight: approx. 8.0 mg

Marking: RF

Observe precautions for handling.

13581

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Typ: BFR181TW

Case: SOT-323 Plastic case

Weight: approx. 6.0 mg

Marking: WRF

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

°C

Base current

I_B

160

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 78 °C

P_tot

T_j

150

T_stg

- 65 to + 150

Maximum Thermal Resistance

Parameter

Test condition

Symbol

R_thJA

Value

450

Unit

K/W

Junction ambient

¹⁾on glass fibre printed board (25 x 20 x 1.5) mm³plated with 35 μm Cu

Document Number 85024

Rev. 1.3, 28-Apr-05

www.vishay.com

12 3 4 5 6

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